Product Summary

The STP13NK60ZFP is obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Parametrics

STP13NK60ZFP absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 600 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous) at TC = 25℃: 13A; (5)ID Drain Current (continuous) at TC = 100℃: 8.2A; (6)IDM Drain Current (pulsed): 52 52A; (7)PTOT Total Dissipation at TC = 25℃: 35 W; (8)Derating Factor: 0.27 W/℃; (9)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000V; (10)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (11)VISO Insulation Withstand Voltage (DC): 2500 V; (12)Tj Tstg Operating Junction Temperature Storage Temperature: -55 to 150℃.

Features

STP13NK60ZFP features: (1)TYPICAL RDS(ON) = 0.48 Ω; (2)EXTREMELY HIGH DV/DT CAPABILITY; (3)100% AVALANCHE TESTED; (4)GATE CHARGE MINIMIZED; (5)VERY LOW INTRINSIC CAPACITANCES; (6)VERY GOOD MANUFACTURING REPEATIBILITY.

Diagrams


STP13NK60ZFP INTERNAL SCHEMATIC DIAGRAM

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